ASML光刻技术在65纳米及更远技术节点的挑战

Challenges of Advanced Lithography for 65nm and Below

Jo Finders – Imaging System Development Specialist

With today’s challenges in advanced lithography leading toward sub 65nm resolution, implementation of ulta high NA ArF lenses, immersion technology, and numerous Resolution Enhancement Techniques, will be necessary. Imaging solutions for both logic, and memory products must carefully consider the performance capability of the imaging system, and available choices of illumination techniques, together with manufacturable circuit designs. Presentation of experimental and simulated results specific for both 65nm node, and 45nm node will be given, together with discussions of system requirement, and design concept, as well as illumination shaping, and reticle design concerns.